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// 59m agoNEWS
Samsung doubles HBM4 output next year
Samsung Electronics plans to aggressively scale output of its next-generation high-bandwidth memory chips, projecting that sixth-generation HBM4 and seventh-generation HBM4E will account for approximately 80% of its total HBM shipments next year, up from 40% this year. To enable wafer thinning and control warpage for 12-layer and higher DRAM stacks, the company is increasing outsourced glass carrier processing volume 2.5-fold as overall HBM capacity expands nearly 40% to 250,000 wafers monthly.
// ANALYSIS
Samsung is betting big on advanced packaging and custom foundry base dies to break SK Hynix's grip on the premium AI memory market.
- –A 2.5-fold increase in glass carrier throughput confirms that Samsung is resolving critical warpage and thinning challenges required for dense 12-layer and taller vertical stacks.
- –Accelerating the HBM4 family to 80% of its production mix signals rapid obsolescence of older HBM standards in favor of higher-margin architectures tuned for next-generation AI accelerators.
- –Deploying 1c DRAM alongside 4nm custom base dies leverages Samsung’s integrated device manufacturer (IDM) edge, uniting memory design and foundry manufacturing under one roof.
// TAGS
samsunghbm4hbm4edramhigh-bandwidth-memorysemiconductorsnvidiaai-hardware
DISCOVERED
59m ago
2026-09-20
PUBLISHED
3h ago
2026-09-20
RELEVANCE
8/ 10
AUTHOR
giuliomagnifico